Vertically Aligned 2-D MoS₂ based High Performance Humidity Sensor

In this study, we present a humidity sensor based on vertically aligned molybdenum disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ), which was fabricated by depositing a MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> sensing layer using the chemical vapor deposition (CVD) method. The sensor exhibits a remarkable electrical response characterized by current modulation as the humidity level rises from 30% to 60% at room temperature. The device exhibits response times of approximately 690 seconds and achieves complete recovery at around 295 seconds with excellent repeatability at 50% relative humidity (RH). These results signify that CVD-grown vertically aligned MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based sensors hold substantial promise for efficiently monitoring changes in humidity level, positioning them as strong candidates for more stable sensor development.