Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications

In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device's behavior for space applications. The enhancement in threshold voltage (Vₜₕ), transconductance (gₘ), and ON resistance (RON, spec) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.