Robust Growth of Electronic Grade p-type Large Area 2D WSe2 and High-performance PMOS Transistor

Direct growth of large area WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (1 cm 2 ) with controlled layer number has been demonstrated using a robust and cost-effective water-assisted chemical vapour deposition (CVD) method. Through Raman and PL spectroscopy along with transport measurements, we have evaluated the structural, optical and electrical characteristics of the as-grown WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layers. We have addressed the persistent contact issue for 2D materials, achieving a distinct p-type nature, a vital advancement in the realm of PMOS for CMOS technology integration. Furthermore, device-to-device performance variations are also evaluated, contributing to standardizing the quality of the 2D semiconductors and optimizing growth parameters.