Gate Leakage Current Analysis using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-SiC MOSFETs

In this article, we propose a method to characterize the trapping time constant from the gate leakage current, which provides advantages over conventional methods of drain current transient characterization or measuring threshold voltage shifts after the application of gate stress voltage. The proposed method is iterative, and convergence of the solution is guaranteed using probability. Output is a trapping time constant spectrum, symbolizing the trapping behavior of both holes and electrons as negative and positive peaks in amplitude, respectively. We observe two distinct trapping mechanisms from the gate leakage transient measurements. The first is hole trapping with an activation energy of 20m eV, and the second is electron trapping with 60m eV as activation energy.