Unveiling the Hidden Impact of Self-Heating on Ferroelectric FinFET and FDSOI based In-Memory Computing

Ferroelectric Field-Effect Transistors (FeFETs) having the same structure as normal transistors are affected by self-heating. Consequently, there is a reduction in the ON current and a decrease in the sensing margin which increases the probability of error for in-memory computing applications. In this paper, we have investigated for the first time how self-heating impacts the reliability of Fe-FinFET and Fe-FDSOI-based systems. Our analysis unveils that Fe-FinFET devices are more prone to self-heating effects as compared to Fe-FDSOI devices due to channel confinement. Furthermore, we have evaluated how self-heating impacts the performance of Fe-FET-based various in-memory computing systems.