We have reported resistive switching characteristics of Au/ZnO/Indium Tin oxide (ITO)/Polyethylene terephthalate (PET) flexible resistive memory device. The device was fabricated at room temperature which is compatible for flexible substrate. The presence of interfacial and filamentary switching operation depending on the operation cycles has been observed in the devices. The interfacial operation occurs at lower current as compared to the filamentary operation.
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Azhar et al. (2024) studied this question.
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