A Physics-Oriented Model of Cryogenic MOSFETs including the Subthreshold Kink Effects

A physics-based cryogenic MOSFET current model including subthreshold kink effects is developed in this work. The cryogenic surface potentials and drain current of planar MOSFETs with and without band tail effects are modeled. With the assumption that the band tail contributes mobile charge into channel transport, our model reproduces the cryogenic SS (subthreshold swing) saturation phenomenon and, particularly, the measured kink effects in the transfer characteristics. Our model prediction has good agreements with TCAD simulations in the temperature range of 10K-300K as well as experimental data.