DC and RF Characteristics Study of III-Nitride β-Ga₂O₃ Nano-HEMT with the variation of Relative Gate Positions

This article presents an investigation of the DC and RF characteristics of III-Nitride / β-Ga₂ O₃ nano-HEMT by varying the relative gate positions. Three gate positions are considered for the investigation of various performance factors comprising of DC, RF/THz, and noise characteristics while maintaining a fixed length between source and drain. It is observed that RF and noise characteristics are diminished when the gate is closer to source than its counterparts. The device physics of this hypothesis is investigated in this article.