DC & AC Performance Analysis of a T gate AlGaN/GaN HEMT on BGO substrate

Abstract Investigation of DC and AC performance of Nano scale AlGaN/GaN High electron mobility transistors (HEMTs)with T shaped gate on a Beta Gallium Oxide (BGO) substrate is done. The DC and RF characteristics of the device are analysed using Silvaco TCAD software. The threshold voltage (Vth) and transconductance (gm) of the device are also analysed. The device exhibited a cut off frequency of 250 GHz and a maximum oscillation frequency of 830 GHz. The proposed device is compared with T Gate AlGaN/GaN HEMTs on other reported substrate-silicon carbide (4H-SiC), with similar dimension. The device performance was analysed at different temperatures. The dc and ac measurements revealed that AlGaN/GaN HEMTs grown on BGO substrates will be a superior among other substrates for high-power and high-frequency applications.