Extension of ASM-HEMT Framework for Cryogenic Temperatures

In this work, we present a physics-based compact model for GaN HEMTs valid down to cryogenic temperatures. The effect of temperature on a DC current-voltage and noise characteristics of the device is discussed, followed by a description of the modeling approach. The work aims to extend the applicability of the Advanced SPICE Model (ASM)-HEMT framework for cryogenic applications. The model is validated with the experimental results from the room temperature (300K) to the cryogenic temperature (4.2K).