Self-heating effect (SHE) in void embedded SOI (VESOI) MOSFET was analyzed using 3-D finite-element modeling (FEM) simulation. The induced void under the silicon channel improved short channel effect (SCE), however, degraded the thermal performance. The impacts of related device geometry and process fluctuation are investigated to provide guidelines for mitigating the self-heating effect in device design, as the scaling-down of the device. The results indicate that the embedded void has a significant impact on device lattice temperature.
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Liu et al. (2024) studied this question.
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