Ultra-High Endurance (>10¹²) and High Drive-Current Selector in Sub-30nmΦ Cell using Stable Oxide Doped with As-Se Free High Melting-Point Compound

We demonstrate ultra-high endurance selector with excellent scalability toward high-performance cross-point storage class memory (SCM). By employing stable oxide doped with high melting-point (Tₘ) compound as a selector, atomic diffusion during cycling is strongly suppressed even for small cell (sub-30nmφ) and high drive current, which is confirmed by thermal TCAD and ab initio calculations. The fabricated sub-30nmφ pillar As-Se free selector achieves 10 12 cycles, low half-selected current (~4nA) and high drive current density (~15MA/cm 2 ).