This work discusses the optimization of a Step Field Plate (SFP) RF LDMOS transistor to enhance Power Amplifier (PA) performance. The impact of structural parameters: length of overlap between gate and P-well mask (Lw), between gate and N-LDD mask (Lₓ) and length of gate (LG) on transconductance, device capacitances and operating frequency of the transistor is analyzed. Next, they are fine tuned to maximize large signal performance- output power, gain, and efficiency- of a common source PA circuit.
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Patel et al. (2024) studied this question.
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