High-Speed Electrical Transient Thermometry of Monolayer MoS₂

Self-heating greatly limits performance of devices based on two-dimensional (2D) materials. Here, we present a novel high-speed thermometry method for 2D semiconductor devices. Utilizing nanosecond pulsed measurements, at timescales shorter than the device thermal time constant, we probe transient self-heating in monolayer MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> transistors. We measure temperature-dependent thermal resistance of 2D semiconductor devices, extracting the thermal boundary conductance of monolayer MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> in a wide temperature range. Our results offer insights into 2D materials thermal interfaces.