Dopant-Dependent Flicker Noise of Hafnium Oxide Ferroelectric Field Effect Transistor

This article reports an improvement in the low-frequency noise characteristics of hafnium oxide-based (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) ferroelectric field-effect transistors (FeFET) using different doping materials, namely silicon and zirconium. The (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) layers on the devices were fabricated with a doping ratio of 16:1 for silicon (HSO) and 1:1 for zirconium (HZO). The primary sources of noise can be categorized into fluctuations in the number of carriers (△N) and fluctuations in the effective transistor mobility (△μ). The results indicate that mobility fluctuations are dominant, regardless of the doping material. Analysis of the scattering factor extraction reveals that HZO-based FeFETs exhibit higher scattering, leading to increased fluctuations in the mobility of charge carriers due to the trapping of carriers within a trap.