Design and Fabrication of X-band GaN LNA MMIC Using an Empirical Noise Model

This paper introduces a novel empirical noise model tailored for Gallium Nitride (GaN) devices, enhancing low noise amplifier (LNA) design efficiency. Contrasting traditional models, ours relies on detailed measurements from diverse GaN operating conditions, capturing device's unique noise traits. We detail the model's mathematical formulation and its application in LNA design. The model is substantiated by the fabrication of an x-band LNA MMIC having an average noise figure and gain of 1.75 dB and 15 dB respectively.