Innovative Solution For On-Wafer RF Characterization of High Power GaN HEMT Devices

This paper reports the development of an innovative bias tee for the on-wafer RF characterization of high-power GaN HEMT devices. The designed and developed bias tee solves the issue of instability of high-power GaN HEMT devices and enables the ON-wafer measurement. Using the developed bias tee, SSPL GaN HEMT devices having a gate width of 3mm operating at the S-band and a gate width of 1.75mm operating at the X-band have been measured with a power density of 5W/mm with 28V drain voltage.