Hot carrier degradation in double SOI devices was investigated under both MOSFET and BJT operation modes. It was found that hot carrier stress (HCS) induced traps deteriorate the parameters in MOSFET mode and increase the base current in BJT mode. Moreover, a recommended terminal setup between the two modes for better reliability performance is provided through further experimental results with interchanged connection. Our work contributes to the reliability analysis in SOI devices with alternative modes.
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Qian et al. (2024) studied this question.
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