Fast response fabricated MoS2-photodiode based thin film

In this study, we present the fabrication and characterization of a thin film based on 1 T-MoS 2 pn photodiode for the purpose of quick response photodetection application. The photodiode was fabricated using RF-sputtering process. The scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FTIR) techniques were employed to investigate the surface topology and structural characteristics of the nanostructured MoS 2 thin film. The electrical properties of the photodiode that was produced were examined by conducting measurements of its current–voltage (I-V) characteristics across a range of bias voltages spanning from − 2 to + 2 V. The external quantum efficiency (EQE) of the pn photodiode that was produced was determined to be as high as 9.8%. Additionally, the internal quantum efficiency (IQE) was found to be as high as 10.5%. Furthermore, a time response of 1.748 ms was observed. The findings of this study illustrate the capability of MoS 2 photodiodes in facilitating rapid response photodetection applications.