Electrical properties of PVC:BN nanocomposite as interfacial layer in metal-semiconductor structure

In this study, a comprehensive examination is assumed to investigate the influence of interfacial layers composed of polyvinyl chloride (PVC) and polyvinyl chloride-boron nitride (PVC: BN) on the electrical characteristics of the Au/n-Si structure. Two distinct structures, namely Au/PVC/n-Si (MPS1) and Au/PVC: BN/n-Si (MPS2), are fabricated for this purpose. The provided boron nitride (BN) nanostructures are analyzed using X-ray diffraction (XRD) patterns to determine their average crystalline size and surface morphology. Following the structural analysis, current-voltage (I–V) measurements are conducted over an extensive voltage range (± 3 V). Subsequently, the fundamental electrical properties of the developed Schottky structures are determined using various methods and compared. Experimental results indicate that the PVC: BN nanocomposite leads to an increase in the potential barrier height (BH), shunt resistance (Rsh), and rectifying rate (RR = IF/IR), while simultaneously decreasing the ideality factor (n), series resistance (Rs), and surface states density (Nss). It was discovered that the MS structure’s RR was 7 times lower than that of the MPS2 structure. Moreover, the energy-dependent N ss density is also derived using n(V) and Φ B0 (V) functions. Based on the ln(I R )−V R 0.5 profile at the reverse bias region, the Schottky-emission (SE) type conduction mechanism is effective for MS structures, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.