Rear Surface Passivation for Ink‐Based, Submicron CuIn(S, Se)₂ Solar Cells (Adv. Energy Mater. 10/2024)

CISSe Solar Cells In article number 2303309, Alexander R. Uhl and co-workers develop a novel rear contacting structure for solution-processed CuIn(S,Se)2 (CISSe) solar cells to reduce the rear surface recombination losses. An atomic layer deposited Al2O3 film was employed to passivate the Mo/CISSe rear surface while precipitates, formed via chemical bath deposition, of CdS were used to generate nanosized point openings.