Research on transmission and crosstalk characteristics of a new type of through silicon via and multilayer through silicon via

In this work, a new type of bar-coaxial ring TSV (B-coaxial ring TSV) structure was proposed. This study used three-dimensional electromagnetic simulation software for analysis. Firstly, the conventional Bar-TSV (B-TSV) structure and the B-coaxial ring TSV structure were modeled, and their S-parameter results were compared. Our results indicated that the B-coaxial ring TSV structure had better transmission characteristics and crosstalk resistance. Secondly, by simulating of the B-coaxial ring TSV structure and the coaxial ring-tapered TSV structure, we proposed how to choose different structures for different application scenarios. Thirdly, the influence of some structural parameters of the B-coaxial ring TSV structure on the transmission performance was studied. Finally, the multilayer TSV structures of conventional B-TSV, B-coaxial ring TSV and coaxial ring-tapered TSV were studied respectively, and their performance was compared and analyzed.