Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the conventional SiGe photodetectors, supporting silicon-integrated on-chip photodetection in new wavelength bands beyond 1.6 microns (e.g., U-band and 2 microns). Here we realize a silicon-integrated four-channel wavelength division multiplexing (WDM) optical receiver based on a micro-ring resonator (MRR) array and four p-n homojunction GPDs by using mechanically exfoliated monolayer graphene. These GPDs based on the photo-thermoelectric (PTE) effect operating under zero (current) bias exhibit responsivities of ~1.1 V W^-1 and flat frequency responses up to 67 GHz which is set-up limited. The GPDs show good consistence benefiting from the compact active region array (0.006 mm^2) covered by a single hBN/graphene/hBN stack. Moreover, the WDM graphene optical receiver realized the 4x16 Gbps non-return to zero (NRZ) optical signal transmission. To the best of our knowledge, it is the first GPD-array-based optical receiver using mechanically exfoliated graphene and edge graphene-metal conduct. This work shed light on the large-scale integration of GPDs by using the high-quality mechanically exfoliated graphene, promoting the application and development of the graphene photonic devices.
No takes yet. Share an insight, caveat, or question.
Yu et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: