Evaluating Wide Band Gap Semiconductor Hybrid Switches: A Comparative Analysis

In an effort to completely transform the effectiveness and performance of DC-DC converters, this study investigates the revolutionary possibilities of wide bandgap devices (WBG) incorporated into hybrid switches. Although traditional semiconductor paralleling has shown to be an economical means of increasing current capacity, but provide a challenge in high-frequency operations. Examining WBG technologies such as silicon carbide (SiC) and gallium nitride (GaN), this work aims to create WBG based hybrid switches that match the advantages of traditional topologies, allowing for higher frequencies of operation. In order to minimize switching losses, several configurations of hybrid switches based on WBG are explored. The double pulse test is used to examine the switching losses. The obtained results identifies that the SiC/GaN hybrid switch has almost 50% reduced in switching losses at higher currents when compared to SiC/SiC, GaN/GaN switch.