Magnetotransport and Fermi surface studies of a purported nodal line semimetal ZrAs2

We report the magnetotransport, Shubnikov--de Haas (SdH), and de Haas--van Alphen (dHvA) quantum oscillation studies on a high-quality ZrAs₂ single crystal grown by the flux method. The temperature-dependent resistivity ρ(T) shows a metallic behavior in zero field, whereas there is an upturn in resistivity in the presence of high magnetic fields. Large magnetoresistance ($1010%$ for I0.28em0ex||0.28em0ex[010], B0.28em0ex||0.28em0ex[105] and $800%$ for I0.28em0ex||0.28em0ex[101], B0.28em0ex||0.28em0ex[010]) with quadratic field dependence is observed without any sign of saturation up to the 14 T magnetic field. The carrier concentration is estimated from the field-dependent Hall resistivity, and it is found that the charge carriers are nearly compensated which results in such large magnetoresistance. Six main frequencies 18 T (β₁), 325 T (β₂), 428 T (β₃), 436 T (β₄), 575 T (β₅), and 1160 T (α) are identified from dHvA oscillation for B0.28em0ex||0.28em0ex[010], which are in good agreement with theoretically calculated frequencies. We also observe a large anisotropic magnetoresistance (about $88%, 71%$, and $67%$ at 14 T and 2 K for the three different orientations) and the planar Hall effect in ZrAs₂.