Polycrystalline GeSn Films Grown by Hot Wire Chemical Vapor Deposition on SiO₂/Si(001) Substrates

The conditions for the growth of polycrystalline GeSn films on SiO 2 /Si(001) substrates by hot wire chemical vapor deposition are determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure, and transport properties of films is studied. GeSn films obtained at 300 °C have a uniform surface with a roughness of less than 1.0 nm. It is shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm 2 V −1 × s −1 . despite the small grain size of 35 nm. Such films are of great interest for creating thin‐film transistors for active matrices’ liquid crystal displays.