This study introduces novel active extreme boost quasi-Z-source converter (AExB-qZSC) topology. This AExBqZSI have unique features, including additional diodes compared to the ultra-high gain quasi-Z-source inverter (UHGqZSI) and an L-C pair with two extra diodes compared to the high boost qZSI (HB-qZSI), resulting in reduced voltage stress and increased gain. Compared to UHG-qZSI and HB-qZSI topologies, the presented converter configuration shows a significant increase in boost factor with lower duty ratio, as well as reduced voltage and current stresses on the Z-network apparatuses. The voltage stress on the active switch is also halved. Additionally, this converter topology shares a common ground with the source and ensure continuous input current similar to conventional topologies. This paper describes about conventional Z-network topologies, steady-state analysis of the proposed converter, capacitor, inductor, diode, switch stresses.
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Jagan et al. (2024) studied this question.
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