Nanosheet FET is the advanced semiconductor device in VLSI. For below 5nm node, Nanosheet FET providing excellent ON current, gate control over the channel, reduced power dissipation and high performance compared with FinFET and Nanowire FET devices. It has fixed thickness and wide width wires to improve the drive current and electrostatics behavior. Nanosheet FET has wider applications in the memory, analog and RF application. Recent research is in Nanosheet FET toIn this paper, the various Nanosheet FET device structures, its advantage and applications are discussed.
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Rajalakshmi et al. (2024) studied this question.
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