Dielectric Modulated Gallium-Arsenide Gate-All-Around Engineered Field Effect Transistor (GaAs-GAAE-FET) Biosensor for Breast Cancer Detection

This manuscript introduces a novel Dielectric Modulated Biosensor, referred as gallium-arsenide gate-all-around engineered field-effect transistor (GaAs-GAAE-FET), especially designed to detect breast cancer. The primary objective of this cylindrical Gate-All-Around FET biosensor is to improve biosensing performance by combining several device engineering techniques such as channel, gate, and oxide engineering. By using a gallium arsenide channel with junctionless accumulation mode, channel engineering has accomplished. A triple metal gate is deployed for gate engineering, and the Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> +HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> stack has been utilized during oxide engineering. The GaAs-GAAE-FET biosensor features two nanocavities under the triple metal gate to boost detection sensitivity. Early detection of breast cancer is made possible by the unique dielectric constants of MDA-MB-231 and MCF-10A, which alter electrical properties. The proposed GaAs-GAAE-FET design provides a 76.58% higher threshold voltage sensitivity for the MDA-MB-231 biomarker contrasting with the Silicon Gate-All-Around FET (Si-GAA-FET) biosensor.