Design and fabrication of high-performance n+MoS 2 /i-MoS 2 /p-Si nano heterostructure Tandem Solar Cell

This paper reports investigation of n+MoS2/i-MoS2/p-Si tandem heterostructure with different dimensionalities and suitable choice of band alignment for achieving improved photovoltaic performances. DC magnetraon sputtering and Multi physics tool were used for fabrication and optimal selection of the various layesrs of the photovoltaic cell respectively. The emitter and buffer layers based on MoS2 exhibits an improved optical performance with better absorption of photons in the band spectrum 300nm to 850 nm range. The emitter layer has been chosen to effieciently collect electrons to improve the charge carriers distribution of the carrier collection effectively. The emitter layer is interfaced with i-MoS2 buffer layer to develop barrier potential and to intern improve the Open-circuit-Voltage of the cell. The photo-generation rate of the cell was found to be 8*10 27 m-2 s-1 due to optimized intrinsic MoS2 layer thickness. The tandem photovoltaic heterostructure demonstrates Open-circuit-Voltage (Voc) 1.5V and short circuit Current density (Jsc) 40.127mAcm-2. The efficiency and External Quantum Efficieny of the solar cell are found to be 30.8 % and 78% respectively. The PV cell reported in this work exhibits an unique memristive behaviour under light and dark conditions. The comprehensive assessment on the proposed PV cell infer that it can be environmentally stable as its IV characteristics found to be memristive (1000 cycles) and an efficient one as it possesses an excellent carrier distribution.