In this work, we analyzed trifluoromethyl fluorosulfonate (CF 3 OSO 2 F) and trifluoromethoxy sulfur pentafluoride (CF 3 OSF 5 ) regarding their potential use as dielectrics by investigating some of their intrinsic and extrinsic properties. Both compounds show a higher breakdown voltage than SF 6 with averaged relative breakdown voltages of 1.3±0.2 for CF 3 OSO 2 F and 1.4±0.2 for CF 3 OSF 5 compared to SF 6 with 1.0. Like the dielectric (CF 3 ) 2 CFCN, both compounds decompose during the breakdown process. The decomposition products were analyzed by IR spectroscopy and GCIR methods. Furthermore, the molecular structures of both gaseous compounds CF 3 OSO 2 F and CF 3 OSF 5 have been determined by in situ crystallization, and their physical properties were determined as well.
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Golz et al. (2024) studied this question.
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