Analytical evaluation demonstrates temperature and concentration impact on GaAs/Si radial heterojunction properties.
In this article, the electrophysical characteristics of GaAs/Si radial heterojunctions are studied analytically over a temperature range of 50 K to 500 K in increments of 50 K, considering various doping concentrations. The analysis encompasses band gap narrowing (BGN), built-in potential, the difference in band gap between GaAs and Si, and capacitance-voltage (C-V) characteristics. In particular, we focus on shell radii of 0.5 μm and 1 μm within the structure. We found that the thickness of the depletion region of the GaAs/Si radial heterojunction increases with rising temperature. When the doping concentration changes from 2∙1015 to 2∙1018 BGN decreases by 2 MeV. The charge capacity of the GaAs/Si radial heterojunction increases by 3 nF as the temperature rises from 50 K to 500 K. Additionally, the built-in potential of the GaAs/Si radial heterojunction decreases by 1.5 volts with increasing temperature.
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Abdullayev et al. (2025) studied this question.
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