Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment

We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the surface semichannel affect the bombardment angle, which initiates the implantation process. It was found that in the case of a shallow semichannel, the implantation process is observed more than a deep semichannel at one value of the angle of incidence of ions. The dependence of implanted ions on the angle of their bombardment is obtained. It is found that few bombarding ions were implanted into the deep surface semichannel. This is explained by the influence of the second atomic row of the semichannel. The results obtained are of great interest in studying the ion implantation process.