Semi-analytical model predicts temperature response in silicon diode sensors, indicating accurate results.
In this paper the results of the development of a semi-analytical model of the temperature response curve of silicon temperature diode sensors for the case of an arbitrary current transport mechanism, and a physical model that allows for high-precision determination of the temperature response curve for the case of diffusion-dominated current transport are presented. The results obtained using calculations based on this model were compared with experimental data, which showed their correspondence over the entire temperature range.
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Istamov et al. (2025) studied this question.
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