High Sensitivity DTSs Based on Diamond with a Low Doping Drift Layer

Temperature monitoring is considerably important during the operation of power devices. Herein, pseudo-vertical diamond Schottky diodes with a low doped drift layer were fabricated as diode temperature sensors. The current–voltage characteristics determined in the range of 298–664 K revealed an increase in the forward current with increasing temperature. The sensing ability of the as-fabricated sensors was evaluated by characterizing the temperature dependence of the forward voltage drop at certain currents. In this study, the highest sensitivity was obtained for a diode temperature sensor based on the wide-bandgap semiconductor. However, the obtained sensitivities exhibited different values in high and low temperature ranges for the currents of 10 -5 , 10 -4 and 10 -3 A. To explain the sectional sensitivities, theoretical models were proposed based on the thermionic emission model and Cheung's model. The results indicated the presence of an inhomogeneous Schottky contact and a temperature-dependent series resistance, which explained the sectional and ultrahigh sensitivities.