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This is a Experimental Study study.

October 11, 2025Advanced Electronic MaterialsOpen Access

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

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Devices with a SiGeSn barrier showed peak mobilities of 19,000 cm²/Vs, setting a new record for GeSn quantum wells.
At low carrier densities, mobility was several times higher compared to Ge barriers, challenging previous expectations of alloy scattering effects.
Two mechanisms proposed for the high mobility include improved SiGeSn/GeSn interfaces and reduced alloy scattering characteristics.
Significant current–voltage hysteresis and threshold voltage shifts indicate complex electrostatic behavior in the heterostructure.

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Implication

Heterostructure field-effect transistors exhibit peak mobilities over 19,000 cm²/Vs in GeSn quantum wells, suggesting enhanced performance over traditional structures.

Cite This Study

Allemang et al. (2025) studied this question.

synapsesocial.com/papers/68e9b1d9ba7d64b6fc132fdb https://doi.org/10.1002/aelm.202500460

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Implication

Heterostructure field-effect transistors exhibit peak mobilities over 19,000 cm²/Vs in GeSn quantum wells, suggesting enhanced performance over traditional structures.

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

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Implication

Cite This Study

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

Key Points

Discussion

Implication

Cite This Study

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