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This is a Experimental Study study.

October 13, 2025Open Access

Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces

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Buffer layer formation coincides with rapid SiC decomposition and retraction of specific SiC bilayers.
Regular terrace patterns of SiC bilayers are stable post-buffer layer growth, affecting subsequent graphene formation.
Monolayer graphene initiation occurs preferentially at two bilayer high terrace edges due to SiC decomposition behavior.
Different nanoscale resistivities observed can be explained by the heterogeneous graphene growth on specific terraces.

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This study investigates buffer layer dynamics and graphene domain formation on SiC surfaces, suggesting growth control mechanisms.

Guse et al. (2025) studied this question.

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