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This is a Experimental Study study.

October 16, 2025Open Access

300 mm Wafer-Scale SiN Platform for Broadband Soliton Microcombs Compatible with Alkali Atomic References

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Broadband soliton microcomb generation was achieved, enhancing integration with electronic and photonic devices.
The silicon nitride platform displayed consistent insertion loss and high intrinsic quality across 300 mm wafers.
Utilizing plasma enhanced chemical vapor deposition allowed for fabrication of thick SiN films without high stress.
Results indicate potential for mass-manufacturable devices that support advanced applications like LiDAR and optical clocks.

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Implication

This work demonstrates soliton microcombs generated from broadband silicon nitride structures on 300 mm wafers, highlighting implications for atomic clock technology.

Cite This Study

Ou et al. (2025) studied this question.

synapsesocial.com/papers/68f04acce559138a1a06e5f1 https://doi.org/10.48550/arxiv.2506.20895

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Implication

This work demonstrates soliton microcombs generated from broadband silicon nitride structures on 300 mm wafers, highlighting implications for atomic clock technology.

300 mm Wafer-Scale SiN Platform for Broadband Soliton Microcombs Compatible with Alkali Atomic References

Key Points

Discussion

Implication

Cite This Study

300 mm Wafer-Scale SiN Platform for Broadband Soliton Microcombs Compatible with Alkali Atomic References

Key Points

Discussion

Implication

Cite This Study

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