Flux-Dependent Superconducting Diode Effect in an Aharonov–Bohm Interferometer

We theoretically investigate the supercurrent and superconducting diode effect (SDE) in an Aharonov–Bohm (AB) interferometer sandwiched between two aluminium-based superconducting leads. The interferometer features a quantum dot (QD), which is created in an indium arsenide (InAs) semiconductor nanowire by local electrostatic gating, inserted in one of its arms and a magnetic flux threading through the ring structure. The magnetic flux breaks the system time-reversal symmetry by modulating the quantum phase difference between electronic transport through the QD path and the direct arm, which enhances constructive interference in one direction and destructive interference in the other. This leads to a discrepancy between the magnitudes of the forward and reverse critical supercurrents and is the core mechanism that induces the SDE. We demonstrate that the critical supercurrents exhibit Fano line shapes arising from the interference between discrete Andreev bound states in the QD and continuous states in the direct arm. It is found that when electron transport is dominated by the QD-containing path as compared to the direct arm path of the interferometer, the diode efficiency reaches a maximum, with values as high as 80%. In contrast, when the direct arm path dominates transport, the diode efficiency becomes weak. This attenuation is attributed to the participation of higher-order quantum interference processes, which disrupt the nonreciprocal supercurrent balance. Importantly, the proposed AB interferometer system has a relatively simple structure, and the realization of the SDE within it is feasible using current nano-fabrication technologies.