Advancements and Challenges of Highly Efficient and Stable Perovskite Light‐Emitting Diodes

Perovskite light‐emitting diodes (PeLEDs) have emerged as next‐generation luminescent technology, demonstrating significant potential in display and lighting applications due to their exceptional color purity, tunable emission spectra, and cost‐effective solution‐processed fabrication methods. Recent advancements have led to remarkable improvements in external quantum efficiency (EQE), with state‐of‐the‐art devices exceeding 30%. Nevertheless, operational stability remains the primary bottleneck hindering commercialization. The rapid degradation and carrier loss of perovskite films are key factors affecting performance, while some issues, such as poor crystallization quality, non‐radiative recombination defects, ion migration, and interfacial reaction, are frequently cited as major contributors to device instability. In this review, the degradation mechanism of PeLEDs is first summarized. Then, from the perspectives of the preparation of high‐quality perovskite light‐emitting layers and defect passivation, the suppression of ion migration and the improvement of interface stability, the research progresses in enhancing the performance and stability of PeLEDs in recent years are reviewed. It also summarizes the profound understanding of different promotion methods. These results have certain guiding significance for the future development and commercial application of PeLEDs.