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This is a Experimental Study study.

Tuning the interfacial properties of stacked gate dielectrics on silicon carbide by inserting h-BN layer

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Fabrication of SiC capacitors with h-BN stacking shows lower leakage current and interface states, indicating improved performance.

The insertion of a thin h-BN layer reduces the interface state density significantly in SiC devices.
Leakage current density decreased from 5.19 × 10−2 to 3.78 × 10−9 A/cm² at a field of 4 MV/cm.
A stacked gate dielectric structure enhances channel mobility and performance of SiC-based electronics.
The results suggest significant potential enhancements for nanoelectronics and power electronics.

Tang et al. (2025) studied this question.

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