Theoretically investigates localized surface plasmon resonance effects on intraband absorption in GaAs, suggesting significant enhancement under strong photodoping.
We theoretically investigated the impact of the localized surface plasmon resonance (LSPR) of an InAs/GaAs quantum dot (QD) on the intraband absorption of the surrounding GaAs in the case that both GaAs and InAs are strongly photodoped (around 1×10 20 cm –3 ). We found that the intraband absorption for infrared light in the GaAs layer around the QDs can be significantly larger than that of equally strong photodoped bulk GaAs: The LSPR of the QDs significantly enhances intraband absorption in a spectral region of ~10 meV in the near- to mid-infrared range depending on the carrier and QD density.
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Kawakami et al. (2025) studied this question.
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