Failure Mechanism Analysis and Electromagnetic Protection Design of Electronic Systems Under High-Power Electromagnetic Pulse

In this paper, the failure mechanisms and electromagnetic protection design of an electronic switching system under high-power electromagnetic pulse (HPEMP) effects are studied. By integrating experimental testing and modeling simulation methods, the coupling characteristics of HPEMP energy within the electronic switching system, the response characteristics of sensitive components, and their physical failure processes were analyzed. The research indicates that the root cause of system failure under HPEMP irradiation lies in the intrusion of electromagnetic energy coupled through specific anode or gate cable ports, leading to unintended turn-on of the key thyristor device and consequent system functional failure. Mechanism analysis reveals that when the coupled voltage on the thyristor pins exceeds the gate trigger threshold, a carrier regeneration mechanism is activated within the device, resulting in polarity reversal of the PN junction and the formation of a positive feedback path, ultimately causing false triggering. Experimental and simulation results show good consistency in terms of effect thresholds. Based on these findings, effective electromagnetic protection hardening designs targeting the identified electromagnetic vulnerability paths and sensitive components were proposed, and the effectiveness of the protective measures was validated through experiments.