Numerical Analysis of AgInSe₂‐Based Thin‐Film Solar Cells Towards High Efficiency

This study uses the SCAPS‐1D simulator to assess and improve the efficiency of AgInSe 2 ‐based double heterojunction photovoltaic (PV) cells for solar energy harvesting. This design uses n‐type CdS as the window layer and p + ‐type AlSb, CuS, and WSe 2 as the back surface field layers (BSF). The optimized result demonstrates Power Conversion Efficiency (PCE) of 22.08% when AgInSe 2 functions within a single heterojunction, precisely in a design like n‐CdS/p‐AgInSe 2 . After adding BSF layers, the proposed structure of n‐CdS/p‐AgInSe 2 /p + ‐WSe 2 achieved an impressive PCE of 34.69%, whereas n‐CdS/p‐AgInSe 2 /p + ‐CuS attained a PCE of 33.58%. Furthermore, the n‐CdS/p‐AgInSe 2 /p + ‐CuS arrangement exhibits a PCE of 31.98%. The efficient band arrangements at the junctions of CdS/AgInSe 2 and AgInSe 2 /AlSb, CdS/AgInSe 2 and AgInSe 2 /CuS, and CdS/AgInSe 2 and AgInSe 2 /WSe 2 result in a considerable built‐in potential that raises the open circuit voltage (V OC ). The rise in V OC in the AgInSe 2 ‐based dual heterojunctions boosts up the PCE. These results imply that an effective approach for harvesting solar energy in the combination of AlSb, CuS, and WSe 2 BSF layers along with AgInSe 2 absorber layer.