The Collaborative Application of High‐K Dielectric and Ultralow‐K Dielectric Materials in Folded Multilayer Graphene Nanoribbon Interconnect for Enhancing Electrical Performance

For the sake of solving the performance bottleneck of the conventional horizontal multilayer graphene nanoribbon (HMLGNR) and vertical multilayer graphene nanoribbon (VMLGNR) interconnects, a new technique concerning the collaborative application of high‐k dielectric and ultralow‐k dielectric materials (i.e., scheme 4, the conventional insulator dielectric medium SiO 2 is substituted with the nano‐glass of ultralow‐k dielectric; meanwhile, the gap between two neighboring GNR layers is embedded with titanium dioxide TiO 2 of high‐k dielectric) in the novel folded multilayer graphene nanoribbon (FMLGNR) interconnect is proposed in this work. A mathematical model of HMLGNR, VMLGNR, and FMLGNR interconnects is constructed to analyze electrical performance in time and frequency domains. The findings indicate that the original FMLGNR interconnect has obvious performance advantages over the original HMLGNR and VMLGNR interconnects with respect to lower propagation delay and larger 3‐dB bandwidth. Besides, it is demonstrated that the delay time of HMLGNR, VMLGNR, and FMLGNR interconnects for adopting the proposed new technique (i.e., scheme 4) can be reduced by over 81.921%, 82.884%, and 82.870% in contrast to the original HMLGNR, VMLGNR, and FMLGNR interconnects (i.e., scheme 1); meanwhile, the corresponding 3‐dB bandwidth between them can be improved by exceeding 5.923, 6.029, and 6.023 times, respectively. In addition, it is manifested that the delay time and 3‐dB bandwidth of the novel structure of FMLGNR interconnect for adopting the proposed scheme 4 can be reduced 7.992 times and expanded 7.989 times compared to that of the original HMLGNR interconnect, respectively. Therefore, the proposed novel structure of FMLGNR interconnect for adopting the proposed new technique can be regarded as a promising solution for improving the electrical performance of the interconnect system.