Exploring Dopant Choice in HfO2 FE Layer for Negative Capacitance Junctionless FinFET Based Sensors through Sentaurus TCAD

Abstract This paper presents an exploratory investigation of ferroelectric dopant selection in HfO₂ layers on negative capacitance junctionless FinFET-based sensors using Sentaurus TCAD. We examine the fundamental mechanisms behind NC JL FinFET operation and implement Pd-gate hydrogen sensing through work function modulation. The ferroelectric HfO₂ layer is modeled using the time-dependent Ginzburg-Landau (Landau-Khalatnikov) framework with dopant-specific parameters for Zr, Y, Gd, and Si systems. Device structures are implemented in Sentaurus SDE with complete geometric and doping specifications. Our variational study reveals minimal electrical characteristic differences (Vth, Id-Vg behavior) among dopant systems in the simulated structure, suggesting that the specific NC-JL-FinFET geometry and operating conditions may reduce dopant sensitivity. These findings provide a reproducible TCAD framework for ferroelectric sensor design and highlight the need for further investigation into structure-dopant interactions.