Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation model. First, the optimum device structure was derived by varying the thickness of the intrinsic layer (i-layer), the thickness of the p-layer, and the doping concentration of the i-layer. Under 17 keV e-beam irradiation, the electron–hole pairs generated in the i-layer were effectively separated and transported by the internal electric field, thereby contributing to the short-circuit current density (JSC), open-circuit voltage (VOC), and maximum output power density (Pout_max). Subsequently, to investigate the effects of traps, donor- and acceptor-like traps were introduced either individually or simultaneously, and their densities were varied to evaluate the changes in device performance. The simulation results revealed that traps degraded the performance through charge capture and recombination, with acceptor-like traps exhibiting the most pronounced impact. In particular, acceptor-like traps in the i-layer significantly reduced VOC from 2.47 V to 2.07 V and Pout_max from 3.08 μW/cm2 to 2.28 μW/cm2, demonstrating that the i-layer is the most sensitive region to performance degradation. These findings indicate that effective control of trap states within the i-layer is a critical factor for realizing high-efficiency and high-reliability SiC-based betavoltaic cells.