This analysis demonstrates structural characterization of EUV photomasks, suggesting actinic reflectometry effectively detects variations.
The extreme ultraviolet (EUV) lithography relies heavily on the reflection of EUV photomasks in which major contribution is made from the multilayers geometry. This scrutiny explores the potential of actinic reflectometry on EUV photomasks, enabling high sensitivity monitoring of subtle changes in mask stacking structures. By incorporating a rigorous modeling method such as the Abelès method and effective medium approximation (EMA), we present the effectiveness of actinic reflectometry in detecting and characterizing sub-nanometer variations in mask structures. Our results show that actinic reflectometry not only provides accurate EUV reflectance measurements but also offers a versatile approach to macroscopic structural characterization of EUV photomasks. Demonstrations are included utilizing the actual in-line data from Samsung Photomask shop.
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Go et al. (2025) studied this question.
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