This investigation demonstrates a three-fold increase in photoluminescence and significant second-harmonic generation efficiency in 2D materials using silicon nanoantennas, indicating nanophotonic and
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
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Katrisioti et al. (2025) studied this question.
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