High Efficiency SHJ Silicon Bottom Cell with IWO/SiO2 Stack Layer for III-V/Si Tandem Photovoltaics

In this contribution, we demonstrated a route towards high-efficiency SHJ bottom subcells for the fabrication of high-efficiency and low-cost III−V/c-Si tandem solar cells. By optimizing the thickness of front IWO thin films, the reduced reflection loss in the near-infrared region and the contact resistance loss are achieved. This leads to a higher FF and Jsc of optimized SHJ solar cells. It is also shown that, by applying IWO/SiO2 stack thin films for the fabrication of SHJ solar cells, we can obtain a high Jsc gain as well as high FF gain due to the reduced front reflection and enhanced rear reflection. Finally, we are able to improve the power conversion efficiency of SHJ solar cells from 22.80% to 24.88%, mainly driven by FF and Jsc improvement. Applying TCO/SiO2 stack thin films for SHJ solar cells is a promising way to enhance both optical and electrical performance of SHJ solar cells for the fabrication of high-efficiency and low-cost III−V/c-Si tandem solar cells.